Industrial Oven Systems and Pre-Heat devices

Heat Chambers

APPLICATION

Heat Chambers are used for gentle, temperature accurate thermal treatment of components in the area of electronic power controller production. Inert-gas atmosphere supports this process.

Options

  • voltage and wattage variations
  • operating temperature variations
  • painting, multi-colour available as per customer request
  • labelling and documentation in various languages
  • galvanized, hot-dip aluminized steel plate or stainless steel internal tank
  • aluminium or stainless steel drawers
  • perforated (square or round available) drawer bottoms
  • stable and massive charging frames for heavy materials are available
  • electronic PID temperature control with load circuit contactor or solid state relay
  • temperature control with self-improvement function, process alarm for further processing available
  • multi-tank oven
  • doors on front and back side
  • electronic digital clock timer
  • operating hours counter
  • timer function, turns on after adjusted time (max 99h 59 min) (on request as well off)
  • program controller with up to 20 programs each with 16 segments
  • signal and warning light as per requested function
  • viewing window at oven door for visual control
  • shutter plates at air-entering side for subsequent temperature improvement
  • accessible execution with interior unlocking device for the door and if requested additional emergency lamp corresponding to machinery guideline 2006/42/EG
  • multichannel diagram writer for documentation of temperature process
  • interfaces as per customer specification
  • up to 600°C
    operating temperature
  • solide
    in the construction
  • reliably
    heat components
Example 1 - up to 450 °C - 400 x 1,000 x 600 mm - part# 1367550

 

  • 400 x 1,000 x 600 mm
    (width x depth x height)
  • operating temperature: up to 450 °C
  • heat capacity: 8.5 kW

 

 

This Thermal Chamber is used for thermal treatment of wafer discs for semiconductor production under nitrogen and forming gas atmosphere. Target: electron irradiation and Implantat Ions cause radiation damage at semi-conductor wafer which can be cured with a temperature process (250 °C to 420 °C). This curing process must be under inert-gas atmosphere with a high degree of temperature stability and reproducibility.

CONSTRUCTION

  • electronic temperature control with electronic temperature protection
  • load circuit: solid state relay
  • temperature registration with four Mineral Insulated Thermocouples type K for process monitoring
  • integral 1.4541 / 1.4301 stainless steel process tube at interior
  • internal diameter: 200 mm
  • outer diameter: 204 mm
  • tube length: 720 mm
  • 5 mm thick bottom with entrance for pre-heated process gas
  • glow meter, pressure reducing valve and cut-off valve for nitrogen and forming gas contingent
  • painting: RAL 6011 reseda-green structure
Example 2 - up to 550 °C - working capacity: Ø 250 x 750 mm long - part# 1170496

 

  • working capacity: Ø 250 x 750 mm long
  • operating temperature: up to 550 °C
  • heat capacity: 10 kW
  • blower: 460 W

 

 

This Thermal Chamber is used for thermal treatment of wafer discs for semiconductor production under nitrogen and forming gas atmosphere.

CONSTRUCTION

  • electronic temperature control with three channels
  • viewing choice and –star via separate control switch
  • electronic temperature protection
  • load circuit: solid state relay
  • Band Heater monitoring (700 °C max.)
  • actual value exit via flange socket
  • 1.4571 stainless steel tube thermal chamber with mounted Ceramic Heat-Cool-System
  • double blower for quick cool-down of interior temperature
  • flow volume meter for nitrogen and oxygen contingent with 2/2 control valve, triggering with resting switch or program controller
  • painting: RAL 6011 reseda-green structure

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